Method to alter silicide properties using GCIB treatment

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United States of America Patent

PATENT NO 8709944
APP PUB NO 20130230984A1
SERIAL NO

13888981

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Abstract

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A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

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Patent Owner(s)

Patent OwnerAddress
TEL MANUFACTURING AND ENGINEERING OF AMERICA INC3455 LYMAN BLVD CHASKA MN 55318

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gumpher, John Niskayuna, US 9 123
Hautala, John J Beverly, US 60 1845
Russell, Noel Waterford, US 34 296

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  • 1 Citation Count
  • H01L Class
  • 7.09 % this patent is cited more than
  • 11 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges7625916189582342423416712683684320001 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0500100015002000250030003500400045005000550060006500

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