Latch circuit and semiconductor device
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United States of America Patent
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Jun 17, 2014
Grant Date -
Sep 5, 2013
app pub date -
Mar 1, 2013
filing date -
Mar 5, 2012
priority date (Note) -
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status (Latency Note)
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Abstract
A nonvolatile latch circuit is provided. In the latch circuit, a transistor in which a channel region is formed with an oxide semiconductor, which is a wide band gap semiconductor, is included, and data is stored in a node formed by one terminal of a capacitor and one of a source and a drain of the transistor, and is brought into a floating state when the transistor is turned off. After that, even when charge stored in the node is insufficient at time of restoring the data, charge is supplied by feedback; therefore, time necessary for restoring the data can be shortened and even when the power supply is restarted in the state of storing data, the data can be restored at high speed.
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