SEMICONDUCTOR DEVICE, MANUFACTURING METHOD AND TRANSISTOR CIRCUIT
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United States of America Patent
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Apr 18, 2013
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Mar 18, 2011
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Abstract
A transistor circuit includes a first high electron mobility transistor and a second high electron mobility transistor having a negative threshold voltage, wherein a source of the second high electron mobility transistor is coupled to a gate of the first high electron mobility transistor, and a gate of the second high electron mobility transistor is coupled to a source of the first high electron mobility transistor.
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