METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER
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United States of America Patent
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Issued Date -
Sep 5, 2013
app pub date -
Sep 2, 2011
filing date -
Sep 3, 2010
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Abandoned
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Abstract
A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.
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