Method to alter silicide properties using GCIB treatment

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United States of America Patent

PATENT NO 8703607
APP PUB NO 20130224950A1
SERIAL NO

13888924

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Abstract

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A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

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Patent Owner(s)

Patent OwnerAddress
TEL MANUFACTURING AND ENGINEERING OF AMERICA INC3455 LYMAN BLVD CHASKA MN 55318

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gumpher, John Niskayuna, US 9 123
Hautala, John J Beverly, US 60 1845
Russell, Noel Waterford, US 34 296

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