Semiconductor device comprising capacitor and method of fabricating the same
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United States of America Patent
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Jun 24, 2014
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N/A
app pub date -
Jan 25, 2013
filing date -
Dec 24, 1997
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Abstract
A semiconductor device, having a memory cell region and a peripheral circuit region, includes an insulating film, having an upper surface formed on a major surface of a semiconductor substrate to extend from a memory cell region to a peripheral circuit region thereof. A capacitor lower electrode is formed in the memory cell region to upwardly extend beyond the upper surface of the insulating film on the major surface of the semiconductor substrate. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. The upper surface of the insulating film is located between the top and bottom surfaces of the capacitor lower electrode part.
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