METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 15, 2013
app pub date -
May 10, 2012
filing date -
Feb 15, 2012
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Abandoned
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Abstract
A method for fabricating a semiconductor device includes etching a substrate to form a pillar isolated by a trench, forming a buffer layer along the entire structure including the pillar, forming a diffusion barrier layer that exposes a portion of the buffer layer at a first sidewall of the pillar, forming a liner layer along the entire structure including the diffusion barrier layer, selectively ion-implanting dopants into the liner layer, and forming a junction in the first sidewall of the pillar by diffusing the dopants through a thermal process.
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