CREATION OF OFF-AXIS NULL MAGNETIC FIELD LOCUS FOR IMPROVED UNIFORMITY IN PLASMA DEPOSITION AND ETCHING
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United States of America Patent
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Issued Date -
Aug 15, 2013
app pub date -
Mar 16, 2010
filing date -
Nov 6, 2009
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Abandoned
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Abstract
Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate.
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