MANUFACTURING METHOD OF MEMORY CAPACITOR WITHOUT MOAT STRUCTURE
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United States of America Patent
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Issued Date -
Aug 8, 2013
app pub date -
May 2, 2012
filing date -
Feb 3, 2012
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Abandoned
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Abstract
A manufacturing method of a memory capacitor without a moat structure includes the steps of: providing a semiconductor substrate defined with an array region and a peripheral region; forming a first oxidized layer on the array region; forming a second oxidized layer on the peripheral region; planarizing the first and the second oxidized layers; forming an insulating layer on the first and the second oxidized layers; forming a plurality of trenches on the array region, where the trenches pass through the first oxidized layer and the insulating layer on the first oxidized layer; forming a conductive layer on the side and base surfaces of each trench; removing a portion of the conductive layer and a portion of the insulating layer to form a plurality of notches to expose the first oxidized layer; and removing the first oxidized layers which are exposed from the notches.
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