SLOTTED ELECTROSTATIC SHIELD MODIFICATION FOR IMPROVED ETCH AND CVD PROCESS UNIFORMITY
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United States of America Patent
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Issued Date -
Aug 1, 2013
app pub date -
Mar 8, 2013
filing date -
Apr 1, 2003
priority date (Note) -
Abandoned
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Abstract
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
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