CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION
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United States of America Patent
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Issued Date -
Aug 1, 2013
app pub date -
Jan 27, 2012
filing date -
Jan 27, 2012
priority date (Note) -
Abandoned
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Abstract
A cast silicon crystalline ingot comprises two major generally parallel surfaces, one of which is the front surface and the other of which is the back surface; a perimeter surface connecting the front surface and the back surface; and a bulk region between the front surface and the back surface; wherein the cast silicon crystalline ingot has no transverse dimension less than about five centimeters; the cast silicon crystalline ingot has a dislocation density of less than 1000 dislocations/cm2. Wafers sliced from the cast silicon crystalline ingot have solar cell efficiency of at least 17.5% and light induced degradation no greater than 0.2%.
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