COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Aug 1, 2013
app pub date -
Dec 31, 2012
filing date -
Jan 27, 2012
priority date (Note) -
Abandoned
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Abstract
An embodiment of a compound semiconductor device includes: an electron transit layer; an electron supply layer formed over the electron transit layer; a two-dimensional electron gas suppressing layer formed over the electron supply layer; an insulating film formed over the two-dimensional electron gas suppressing layer and the electron transit layer; and a gate electrode formed over the insulating film. The gate electrode is electrically connected with the two-dimensional electron gas suppressing layer.
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