Semiconductor device and method for manufacturing the same
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United States of America Patent
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Issued Date -
Jul 25, 2013
app pub date -
Nov 18, 2011
filing date -
Nov 29, 2010
priority date (Note) -
Abandoned
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Abstract
A method is disclosed for manufacturing a semiconductor device. The method includes providing a substrate and forming a well region in the substrate by an ion implantation. The method also includes forming, by rapid thermal oxidation and on the substrate having the well region, an oxide layer for repairing the substrate damaged by the ion implantation. Further, the method includes removing the oxide layer and forming a gate oxide layer on the repaired substrate having the well region.
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