Semiconductor Devices Having an Enhanced Absorption Region and Associated Methods
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United States of America Patent
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Issued Date -
Jul 25, 2013
app pub date -
Dec 3, 2012
filing date -
Oct 22, 2009
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Abandoned
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Abstract
Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm.
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