PHOTONIC DEVICE HAVING EMBEDDED NANO-SCALE STRUCTURES
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United States of America Patent
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Issued Date -
Jul 25, 2013
app pub date -
Jan 19, 2012
filing date -
Jan 19, 2012
priority date (Note) -
Abandoned
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Abstract
The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.
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