Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature
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United States of America Patent
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Apr 7, 2015
Grant Date -
Jul 25, 2013
app pub date -
Mar 12, 2013
filing date -
Nov 23, 2009
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Abstract
Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
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