ELECTROMAGNETIC CASTING METHOD OF SILICON INGOT
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United States of America Patent
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Issued Date -
Jul 25, 2013
app pub date -
Mar 11, 2013
filing date -
Sep 3, 2010
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Abandoned
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Abstract
Disclosed is an electromagnetic casting method of a silicon ingot in which a polycrystalline silicon ingot is continuously cast by charging silicon raw materials into a bottomless cold copper mold, melting the charged silicon raw materials through electromagnetic induction, pulling down to solidify the molten silicon, in which the length of a part of copper mold positioned below a lower end of an induction coil surrounding the copper mold is set to more than 40 mm and 180 mm or less. According to this method, a copper contamination of a silicon ingot incurred by a copper cold mold can be suppressed to produce a silicon ingot which is suitable as a starting material of the substrate of a solar cell.
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