BUMPING PROCESS

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United States of America Patent

APP PUB NO 20130183823A1
SERIAL NO

13352537

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A bumping process includes providing a silicon substrate, forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first areas and a plurality of second areas, forming a photoresist layer on the titanium-containing metal layer, patterning the photoresist layer to form a plurality of opening slots corresponded to the first areas of the titanium-containing metal layer, forming a plurality of copper bumps at the opening slots, proceeding a heat procedure, forming a plurality of bump isolation layers on the copper bumps, forming a plurality of connective layers on the bump isolation layers, removing the photoresist layer, removing the second areas and enabling each the first areas to form an under bump metallurgy layer.

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Patent Owner(s)

Patent OwnerAddress
CHIPBOND TECHNOLOGY CORPORATIONNO 3 LIHSIN 5 RD HSINCHU SCIENCE PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Yie-Chuan Hsinchu City, TW 7 24
Dai, Hua-An Kaohsiung City, TW 5 16
Hsieh, Yung-Wei Hsinchu City, TW 15 41
Kuo, Chih-Ming Hsinchu County, TW 49 242
Lin, Cheng-Fan Hsinchu County, TW 12 23

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