METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 18, 2013
app pub date -
Dec 5, 2012
filing date -
Jan 12, 2012
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Abandoned
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Abstract
A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With this thermal etching, a carbon film is formed on the silicon carbide layer. Heat treatment is provided to the silicon carbide layer to diffuse carbon from the carbon film into the silicon carbide layer.
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