SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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app pub date -
Feb 15, 2013
filing date -
Apr 4, 2008
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Abstract
In a method of fabricating a semiconductor device on a substrate having thereon a conductive layer, the conductive layer is patterned to form a plurality of opened regions. A gate insulation layer is formed on a side wall of each of the opened regions. A pillar pattern is formed in each opened region. On each pillar pattern, a gate electrode, which encloses the pillar pattern, is formed by removing the conductive layer between the pillar patterns.
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