SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND MANUFACTURING METHOD OF THE SAME
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United States of America Patent
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app pub date -
Dec 17, 2012
filing date -
May 28, 2009
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Abandoned
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Abstract
A semiconductor device having a vertical channel transistor and a method for manufacturing the same are provided. In the semiconductor device, a metal bit line is formed between vertical channel transistors, and the metal bit line is connected to only one of the vertical channel transistors through an asymmetric bit line contact. Through such a structure, the resistance of the bit line can be improved and the process margin for formation of the bit line can be secured.
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