DOPANT COMPOSITIONS AND THE METHOD OF MAKING TO FORM DOPED REGIONS IN SEMICONDUCTOR MATERIALS
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United States of America Patent
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Issued Date -
Jul 11, 2013
app pub date -
Aug 29, 2012
filing date -
Aug 29, 2011
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Abandoned
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Abstract
Dopant compositions comprising a semiconductor material are described. Examples of dopant compositions comprise a particulate dopant component and a liquid or paste component, or comprise a dopant component and a particulate silicon component. Methods of forming doped regions in a semiconductor substrate material using the dopant compositions are described. A dopant composition including a dopant particulate component is described as a dopant source in a method for the formation of radiation-fired or radiation-doped contacts, for example in the formation of laser-fired or laser-doped contacts. Examples of the method find application in relation to the manufacture of photovoltaic cells. The use of doped particulate material, for example a composition including doped silicon powder, may reduce the likelihood of damage to the substrate.
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