METHOD FOR FORMING MULTI-COMPONENT LAYER, METHOD FOR FORMING MULTI-COMPONENT DIELECTRIC LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 4, 2013
app pub date -
May 3, 2012
filing date -
Jan 2, 2012
priority date (Note) -
Abandoned
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Abstract
A method of forming a multi-component dielectric layer on the surface of a substrate by atomic layer deposition includes injecting a cocktail source of a plurality of sources at least having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a surface of a substrate by injecting the cocktail source, performing a first purge process to remove a non-adsorbed portion of the cocktail source, injecting a reactant to react with the adsorbed cocktail source, wherein a multi-component layer is formed by the reaction between the reactant and the absorbed cocktail source, and performing a second purge process to remove reaction byproducts and an unreacted portion of the reactant.
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