Reactive Sputtering of ZnS(O,H) and InS(O,H) for Use as a Buffer Layer
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United States of America Patent
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Issued Date -
Jun 27, 2013
app pub date -
Dec 22, 2011
filing date -
Dec 22, 2011
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Abstract
A method of manufacturing a solar cell including providing a substrate, depositing a first electrode over the substrate and depositing at least one p-type semiconductor absorber layer over the first electrode. The p-type semiconductor absorber layer comprises a copper indium selenide (CIS) based alloy material. The method also includes depositing by reactive sputtering an n-type In-VI semiconductor layer over the at least one p-type semiconductor absorber layer and depositing a second electrode over the n-type In-VI semiconductor layer.
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