POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME
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Jun 20, 2013
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Aug 3, 2011
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Aug 10, 2010
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There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10−6/K to 6.1×10−6/K between 20° C. and 600° C. and 5.5×10−6/K to 6.6×10−6/K between 20° C. and 1100° C.
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