METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 20, 2013
app pub date -
Jun 21, 2012
filing date -
Dec 16, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for fabricating a semiconductor device includes forming a bottom-electrode metal layer over a substrate, planarizing the bottom-electrode metal layer by a first thickness through a chemical mechanical polishing (CMP) process, etching the bottom-electrode metal layer by a second thickness through a wet etching process, forming a plurality of layers of a magnetic tunneling junction (MTJ) element over the bottom-electrode metal layer, forming a top electrode over the plurality of layers, and forming the MTJ element and a bottom electrode by etching the plurality of layers and the bottom-electrode metal layer using the top electrode as an etch mask.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully