METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 20, 2013
app pub date -
Jun 21, 2012
filing date -
Dec 16, 2011
priority date (Note) -
Abandoned
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Abstract
A method for fabricating a semiconductor device includes forming a first insulation layer over a bottom layer, selectively removing a portion the first insulation layer to form a first trench that exposes the bottom layer, forming spacers on inner sidewalls of the first trench; forming a pillar-shaped second insulation layer in the first trench between the spacers, removing the spacers to form a second trench between the pillar-shaped second insulation layer and the first insulation layer, and burying a conductive layer in the second trench.
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