SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE AND METHOD OF MANUFACTURING THE SAME AND STACKED PACKAGE INCLUDING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20130154111A1
SERIAL NO

13445736

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Abstract

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A semiconductor device including a wafer having an upper surface and a lower surface, circuit layers formed on the upper surface and the lower surface of the wafer, respectively, and a through electrode formed to penetrate the wafer is presented. The through electrode can be configured to electrically coupled the circuit layers formed on the upper surface and the lower surface of the wafer. The semiconductor device can be stacked to form a stacked package.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BYEON, Sang Jin Ichon-si, KR 62 269

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