TRENCH GATE MOSFET DEVICE
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United States of America Patent
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Issued Date -
Jun 20, 2013
app pub date -
Dec 20, 2012
filing date -
Dec 20, 2011
priority date (Note) -
Abandoned
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Abstract
A trench gate MOSFET device has a drain region, a drift region, a trench gate having a gate electrode and a poly-silicon region, a super junction pillar juxtaposing the trench gate, a body region and a source region. By the interaction among the trench gate, the drift region and the super junction pillar, the break down voltage of the trench gate MOSFET device may be relatively high while the on-state resistance of the trench gate MOSFET device may be maintained relatively small.
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