SEMICONDUCTOR HAVING INTEGRALLY-FORMED ENHANCED THERMAL MANAGEMENT
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United States of America Patent
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Issued Date -
Jun 13, 2013
app pub date -
Dec 12, 2011
filing date -
Dec 12, 2011
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Abandoned
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Abstract
A semiconductor structure and method of manufacturing that has integrally-formed enhanced thermal management. During operation of a semiconductor device, electron flow between the source and the drain creates localized heat generation. A containment gap is formed by selectively removing a portion of the back side of the semiconductor device substrate directly adjacent to a localized heat generation area. A thermal management material is filled in the containment gap. This thermal management material enhances the thermal management of the semiconductor device by thermally coupling the localized heat generation area to a heat sink. The thermal management material may be a Phase Change Material (PCM) having a heat of fusion effective for absorbing heat generated in the localized heat generation area by the operation of the semiconductor device for reducing a peak operating temperature of the semiconductor device.
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