METHOD FOR FORMING A SELECTIVE CONTACT
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United States of America Patent
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Issued Date -
Jun 13, 2013
app pub date -
Feb 21, 2011
filing date -
Feb 26, 2010
priority date (Note) -
Abandoned
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Abstract
A method for forming a selective contact for a photovoltaic cell is disclosed. The method includes forming a doped contact layer at the surface of a semiconductor substrate and annealing a portion of the doped contact layer with a laser beam, the portion having a 2D-pattern corresponding to at least a portion of a respective selective contact grid. Wherein the laser beam is pulsed and shaped to the 2D-pattern. A photovoltaic cell having a selective contact formed by the method is also provided.
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