Variable resistive memory device and method of fabricating the same
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United States of America Patent
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Jun 30, 2015
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Jun 6, 2013
app pub date -
May 30, 2012
filing date -
Dec 3, 2011
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Abstract
A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbmSen material layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbmSen material layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.
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