COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THREE-DIMENSIONALLY FORMED COMPONENTS
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United States of America Patent
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Issued Date -
Jun 6, 2013
app pub date -
Dec 6, 2011
filing date -
Dec 6, 2011
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Abandoned
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Abstract
The present invention relates to a compound semiconductor integrated circuit with three-dimensionally formed components, such as three-dimensionally formed bond pads or inductors, positioned above an electronic device. The dielectric layer inserted between the electronic device and the bond pads or inductors thereon has a thickness between 10 to 30 microns, so that it can effectively mitigate the effect of the structure on the device performance. A protection layer can be disposed to cover the electronic devices to prevent contamination from the bond pad or inductor material to the electronic device, and therefore the lower cost copper can be used as the bond pad and inductor material. The three-dimensional bond pad can be used in wire bonding or bump bonding technology.
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