METHOD FOR THE PREPARATION OF A MULTI-LAYERED CRYSTALLINE STRUCTURE

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United States of America Patent

APP PUB NO 20130137241A1
SERIAL NO

13730011

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Abstract

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This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.

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Patent Owner(s)

Patent OwnerAddress
SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)SINGAPORE SINGAPORE SINGAPORE CITY SINGAPORE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Libbert, Jeffrey L O'Fallon, US 62 623
Witte, Dale A Wentzville, US 13 97

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