SOLID-STATE DIODE
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United States of America Patent
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Issued Date -
May 30, 2013
app pub date -
Jul 12, 2012
filing date -
Jul 19, 2011
priority date (Note) -
Abandoned
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Abstract
The solid-state diode comprises a semiconductor substrate having a top side and having two masking regions formed on the top side of the semiconductor substrate and made of a first masking material impermeable to ion implantation, the masking regions comprising two mutually opposite limiting edge portions. The solid-state diode comprises an n-doped cathode region formed in the semiconductor substrate and extending up into the intermediate region between the mutually opposite limiting edge portions of the masking regions, the n-doped cathode region comprising a cathode connection field. The diode comprises a p-doped anode region formed in the semiconductor substrate, extending up into the intermediate region between the mutually opposite limiting edge portions of the masking regions and bordering/overlapping on the cathode region, the p-doped anode region comprising an anode connection field. The masking regions and either the cathode or the anode connection field are substantially on the same electric potential.
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