NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYER
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United States of America Patent
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Issued Date -
May 30, 2013
app pub date -
Nov 28, 2011
filing date -
Nov 28, 2011
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Abandoned
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Abstract
A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element.
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