Method for Producing a Photovoltaic Element Comprising a Silicon Dioxide Layer
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United States of America Patent
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Issued Date -
May 23, 2013
app pub date -
Oct 17, 2012
filing date -
Oct 17, 2011
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Abandoned
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Abstract
Production of a photovoltaic element, more particularly of a solar cell. In this case, an additional silicon dioxide layer is used, which is produced by UV irradiation with a wavelength of less than 200 nm and can improve the interface properties on the silicon and can help to reduce disturbances known by the expression “background plating”.
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