METHOD OF LASER LIFT-OFF FOR LEDS
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United States of America Patent
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Issued Date -
May 23, 2013
app pub date -
Nov 17, 2011
filing date -
Nov 17, 2011
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Abandoned
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Abstract
A laser lift-off method for LEDs forms an elevation difference structure on a conversion substrate corresponding to one isolation zone of an epitaxial layer before epitaxy is formed on the conversion substrate to form the epitaxial layer. The elevation difference structure can release stress between the material interfaces, thus can reduce broken probability while lifting off the conversion substrate and epitaxial layer via laser and further improve production yield.
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