ION BEAM DEPOSITION OF FLUORINE-BASED OPTICAL FILMS
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Nov 12, 2012
filing date -
Nov 11, 2011
priority date (Note) -
Abandoned
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Abstract
The presently disclosed technology uses dissociated fluorine and one or both of hydrogen and oxygen to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclosure within which the sputter deposition operations occur. The dissociated fluorine and one or both of hydrogen and oxygen assist the sputtering of metal-fluoride material from a target and/or deposition of the sputtered metal-fluoride on one or more substrates.
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