Method for splitting a pattern for use in a multi-beamlet lithography apparatus
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
May 18, 2012
filing date -
May 18, 2011
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Abandoned
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Abstract
The invention relates to a method for splitting a pattern for use in a multi-beamlet lithography apparatus. The method comprises providing an input pattern to be exposed onto a target surface by means of a plurality of beamlets of the multi-beamlet lithography apparatus. Within the input pattern first and second regions are identified. A first region is a region that is exclusively exposable by a single beamlet of the plurality of beamlets. A second region is a region that is exposable by more than one beamlet of the plurality of beamlets. On the basis of an assessment of the first and second regions it is determined what portion of the pattern is to be exposed by each beamlet.
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