SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
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United States of America Patent
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Issued Date -
May 16, 2013
app pub date -
Jan 10, 2012
filing date -
Nov 14, 2011
priority date (Note) -
Abandoned
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Abstract
A semiconductor device and a method for forming the same are disclosed, which can protect a polysilicon layer of a bit line contact plug even when a critical dimension (CD) of the bit line is reduced by a fabrication change, thereby preventing defective resistivity caused by a damaged bit line contact plug from being generated. The semiconductor device includes one or more interlayer insulation film patterns formed over a semiconductor substrate, a bit line contact plug formed over the semiconductor substrate between the interlayer insulation films, and located below a top part of the interlayer insulation film pattern, and a bit line formed over the bit line contact plug.
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