NOR FLASH MEMORY CELL AND STRUCTURE THEREOF
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United States of America Patent
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app pub date -
Dec 18, 2012
filing date -
Nov 14, 2011
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Abstract
The present invention provides a NOR flash memory cell. The NOR flash memory cell includes a a substrate, an active area, a first gate structure, a second gate structure and at least one third gate structure. The first gate structure covers a first partial region of the active area and is formed by a silicon-rich nitride material. The second gate structure covers a second partial region of the active area. The third gate structure covers a third partial region between a first opening and the first gate structure. The active area has the first opening, the first opening disposed on a first side of the first gate structure and the first side is not neighbor to the second gate structure. The NOR flash memory cell further comprises a first conducting structure for covering the first opening to form a bit line signal receiving terminal.
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