METHOD FOR MANUFACTURING SEMICONDUCTOR LASER APPARATUS, SEMICONDUCTOR LASER APPARATUS, AND OPTICAL APPARATUS
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Dec 27, 2012
filing date -
Oct 15, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
This method for manufacturing a semiconductor laser apparatus includes steps of forming a first semiconductor laser device having a first electrode, forming a second semiconductor laser device having a second electrode, forming a first solder layer with a first melting point through a first barrier layer on a third electrode, forming a second solder layer with a second melting point through a second barrier layer on a fourth electrode, bonding the first electrode to the third electrode through a first reaction solder layer, a melting point of which rises to a third melting point higher than the second melting point by reacting the first electrode with the first solder layer, and bonding the second electrode to the fourth electrode by applying heat of a first heating temperature to melt the second solder layer with the second melting point after the step of bonding the first electrode to the third electrode.
First Claim
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