SURFACE TREATMENT METHOD OF POLISHING PAD AND POLISHING METHOD OF WAFER USING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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N/A
Issued Date -
May 9, 2013
app pub date -
Nov 5, 2012
filing date -
Nov 7, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Importance

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Non-US Coverage
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Abstract
Provided is a surface treatment method of a polishing pad. The surface treatment method of the polishing pad includes locating a wafer on the polishing pad including a polishing material, supplying a polishing pad polishing material between the polishing pad and the wafer to expose the polishing material included in the polishing pad, and polishing the wafer using the exposed polishing material.
First Claim
all claims..Other Claims data not available
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
LG SILTRON INC | GYEONGBUK SOUTH KOREA CHUNGCHEONGBUK-DO |
International Classification(s)

- 2012 Application Filing Year
- B24B Class
- 493 Applications Filed
- 437 Patents Issued To-Date
- 88.65 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Choi, Se Hun | Incheon, KR | 9 | 4 |
# of filed Patents : 9 Total Citations : 4 | |||
Kim, Kyeong Soon | Daejeon, KR | 1 | 4 |
# of filed Patents : 1 Total Citations : 4 | |||
Mun, Young Hee | Daegu, KR | 8 | 47 |
# of filed Patents : 8 Total Citations : 47 |
Cited Art Landscape
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Patent Citation Ranking
- 4 Citation Count
- B24B Class
- 6.32 % this patent is cited more than
- 12 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

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