DBR Laser Diode With Periodically Modulated Grating Phase
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United States of America Patent
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Issued Date -
May 9, 2013
app pub date -
Nov 9, 2011
filing date -
Nov 9, 2011
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Abandoned
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Abstract
A DBR laser diode is provided where the phase φ of the wavelength selective grating is characterized by periodic phase jumps of period ΛPM and modulation depth φJ and the phase jumps of the wavelength selective grating are arranged substantially symmetrically, antisymmetrically, or asymmetrically about a midpoint of the DBR section along an optical axis of the DBR laser diode. Length of the wavelength selective grating along the optical axis of propagation of the DBR laser diode is (i) between approximately (m+0.01)ΛPM and approximately (m+0.49)ΛPM, when the phase distribution is substantially symmetric with respect to the midpoint of the DBR section, (ii) between approximately (m−0.49)ΛPM and approximately (m−0.01)ΛPM when the phase distribution is substantially antisymmetric with respect to the midpoint of the DBR section, and (iii) between approximately (m+0.6)ΛPM and approximately (m+0.9)ΛPM when the phase distribution is substantially asymmetric with respect to the midpoint of the DBR section.
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