Semiconductor Device and Method of Forming Sloped Surface in Patterning Layer to Separate Bumps of Semiconductor Die from Patterning Layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 9, 2013
app pub date -
Nov 4, 2011
filing date -
Nov 4, 2011
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor device has a semiconductor die with bumps formed over a surface of the semiconductor die. A conductive layer is formed over a substrate. A patterning layer is formed over the substrate and conductive layer. A masking layer having an opaque portion and linear gradient contrast portion is formed over the patterning layer. The linear gradient contrast portion transitions from near transparent to near opaque. The patterning layer is exposed to ultraviolet light through the masking layer. The masking layer is removed and a portion of the patterning layer is removed to form an opening having a sloped surface to expose the conductive layer. The sloped surface in patterning layer can be formed by laser direct ablation. The semiconductor die is mounted to the substrate with the bumps electrically connected to the conductive layer and physically separated from the patterning layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully