STRUCTURE FOR PICKING UP A BURIED LAYER AND METHOD THEREOF

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United States of America Patent

APP PUB NO 20130113104A1
SERIAL NO

13670871

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A structure for picking up a buried layer is disclosed. The buried layer is formed in a substrate and has an epitaxial layer formed thereon. One or more isolation regions are formed in the epitaxial layer. The structure for picking up the buried layer includes a contact-hole electrode formed in each of the isolation regions. A bottom of the contact-hole electrode is in contact with the buried layer. As the structure of the present invention is formed in the isolation region without occupying any portion of the active region, its size is much smaller than that of a sinker region of the prior art. Therefore, device area is tremendously reduced. Moreover, as the contact-hole electrode picks up the buried layer by a metal contact, the series resistance of the device can be greatly reduced. A method of forming the above structure is also disclosed.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATIONNO 1399 ZU CHONG ZHI ROAD ZHANGJIANG HI-TECH PARK PUDONG NEW AREA SHANGHAI 201203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Qian, Wensheng Shanghai, CN 46 161

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