NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, PRODUCTION METHOD FOR SAME, AND CHARGE STORAGE FILM
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United States of America Patent
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Issued Date -
May 9, 2013
app pub date -
Jul 28, 2011
filing date -
Jul 30, 2010
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Abandoned
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Abstract
A non-volatile semiconductor memory device comprises a tunnel insulating film on a semiconductor substrate, a charge storage film on the tunnel insulating film, a blocking insulating film on the charge storage film, a control gate electrode arranged on the blocking insulating film, and source/drain regions formed on the semiconductor substrate on the both sides of the control gate electrode, that the charge storage film is a silicon nitride film produced according to the catalytic chemical vapor deposition technique and that the ratio between the constituent elements: N/Si falls within the range of from 1.2 to 1.4.
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