Graphite Crucible for Silicone Crystal Production and Method of Ingot Removal
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United States of America Patent
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Issued Date -
May 9, 2013
app pub date -
Nov 7, 2012
filing date -
Nov 7, 2011
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Abandoned
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Abstract
A graphite crucible for processing silicon includes a bottom wall including a bottom wall interior facing surface. A plurality of side walls extend upwardly from the bottom wall, each side wall including a side wall interior facing surface. A contact point is provided on the side wall to prevent upward movement of the crucible during ingot removal. The side walls have a coefficient of thermal expansion perpendicular to the solidification direction that is less than 95% of the coefficient of thermal expansion of the silicon processed therein. Also, the side walls and the bottom wall have a thru-plane thermal conductivity from about 90 to about 160 W/m·K at room temperature.
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