High efficiency triple-coil inductively coupled plasma source with phase control
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United States of America Patent
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Apr 23, 2019
Grant Date -
May 2, 2013
app pub date -
Oct 22, 2012
filing date -
Oct 28, 2011
priority date (Note) -
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Abstract
A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.
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